Silicon germanium heterojunction bipolar transistor structure and method

ABSTRACT

Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

BACKGROUND

1. Field of the Invention

The embodiments of the invention generally relate to semiconductorstructures, and, more particularly, to an improved silicon germaniumheterojunction bipolar transistor and a method of forming the improvedtransistor.

2. Description of the Related Art

New communications and test applications require chips operating atever-higher frequencies. While high frequency transistors are availablein group III-V semiconductor materials (e.g., gallium arsenide (GaAs),gallium nitride (GaN), etc.), a silicon-based solution (e.g., a silicongermanium (SiGe) hetero-junction bipolar transistors (HBTs)) would beless expensive and permit higher levels of integration than is currentlyavailable in with such group III-V semiconductor materials.

However, device scaling is also a concern and limitations in currentprocess technology has limited scaling, both vertical and lateral, ofsuch silicon germanium (SiGe) hetero-junction bipolar transistors(HBTs). Specifically, narrowing of the transistor base and collectorspace-charge region increases the current-gain cut-off frequency(F_(t)), but does so at the expense of the maximum oscillation frequency(F_(max)) because of overlap between the collector and extrinsic base.Therefore, in conjunction with device size scaling, it is desirable tobring the collector region closer to the base region in order to enhanceF_(t) by using a

selective ion-implanted collector (SIC) pedestal (e.g., as illustratedin U.S. Pat. No. 6,846,710 issued to Yi et al., on Jan. 25, 2005 andincorporated herein by reference). However, current process technologycannot make such an SIC pedestal narrow enough to cause minimal overlapwith the extrinsic base. Furthermore, interstitials (i.e., damage,defects, etc.), which are created at the SiGe HBT base-collectorinterface as a result of the prior art formation processes (i.e.,ion-implantation), allow unwanted diffusion of the implanted dopants.

SUMMARY

In view of the foregoing, disclosed herein is an improved silicongermanium (SiGe) hetero-junction bipolar transistor having a narrowessentially interstitial-free SIC pedestal with minimal overlap of theextrinsic base. Also, disclosed is a method of forming the transistorwhich uses laser annealing, as opposed to rapid thermal annealing, ofthe SIC pedestal to produce both a narrow SIC pedestal and anessentially interstitial-free collector. Thus, the resulting SiGe HBTtransistor can be produced with narrower base and collector space-chargeregions than can be achieved with conventional technology.

More particularly, disclosed herein is an embodiment of an improvedmulti-layered semiconductor structure. The structure comprises a firstsemiconductor layer and

a second semiconductor layer below the first semiconductor layer.Specifically, a top surface of the second semiconductor layer isadjacent to a bottom surface of the first semiconductor layer. The firstsemiconductor layer is doped with a first dopant (e.g., a p-type dopantsuch as boron (B)). A peak concentration of this first dopant in thefirst semiconductor layer can be greater than approximately 1×10¹⁹ cm⁻³at approximately 0.03 μm above its bottom surface (i.e., above theinterface). The second semiconductor layer comprises a diffusion regionat that top surface and an implant region below the diffusion region.The implant region can be doped with a second dopant (e.g., an n-typedopant such as phosphorous (P), antimony (Sb) or arsenic (As)) at anapproximately uniform concentration. For example, the implant region canhave a uniform second dopant concentration that is greater thanapproximately 1×10¹⁸ cm⁻³.

Thus, the diffusion region can comprise a portion of the first dopantdiffused from the first semiconductor layer above and a portion of thesecond dopant diffused in from the implant region below. However, duringthe formation process, a laser anneal process can be performed toactivate the dopants in the implant region and to remove defects (i.e.,interstitials) from the top surface of the second semiconductor layercaused by the ion-implantation process that forms the implant region.Using a laser anneal process, vice a rapid thermal anneal process,minimizes diffusion of the second dopant from the implant region.Furthermore, since the top surface of the second semiconductor layer hasapproximately no defects, diffusion of the first dopant into thediffusion region from the first semiconductor layer into the secondsemiconductor layer is minimized.

Thus, due to the lack of interstitials at the interface, the secondsemiconductor layer, and particularly, the diffusion region of thesecond semiconductor layer can comprise a first dopant concentrationprofile having a first dopant concentration just below the interfacethat is at least 100 times less than the peak concentration of the firstdopant in the first semiconductor layer just above the interface (i.e.,the peak concentration of the first dopant above the interface is atleast 100 times greater than the concentration of the first dopant belowthe interface). For example, if the peak concentration of the firstdopant in the first semiconductor layer is greater than 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the interface, then due to the lack ofinterstitials at the interface, the first dopant concentration justbelow the interface can be less than approximately 1×10¹⁷ cm⁻³ and canfurther decrease dramatically towards the implant region.

Furthermore, due to minimized diffusion of the second dopant from theimplant region, the second semiconductor layer can further comprise asecond dopant concentration profile in which the concentration of thesecond dopant is approximately uniform in the implant region butdecreases dramatically through the diffusion region towards theinterface. For example, the concentration of the second dopant at theimplant region can be greater than approximately ten times theconcentration of the second dopant at the top surface of the secondsemiconductor layer (i.e., just below the interface). For example, theconcentration of the second dopant in the implant region can be uniformand can be greater than approximately 1×10¹⁸ cm⁻³; however, in thediffusion region the second dopant concentration can increase from lessthan approximately 1×10¹⁷ cm⁻³ at the top surface of the secondsemiconductor layer to approximately 1×10¹⁸ cm⁻³ at the implant region(e.g., at approximately 0.02 μm below the top surface).

This semiconductor structure can, for example, be incorporated into asilicon germanium hetero-junction bipolar transistor in order to improveboth the current-gain cut-off frequency (F_(t)) and the maximumoscillation frequency (F_(max)). That is, such a bipolar transistor cancomprise a base layer (e.g., an epitaxially grown silicon germanium baselayer) that is in situ doped with a first dopant (e.g., a p-type dopantsuch as boron (B)). A peak concentration of this first dopant in thebase layer can be greater than approximately 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the interface (i.e., above its top surface).The base layer can be formed above a collector layer (e.g., a siliconcollector layer). Specifically, a top surface of the collector layer canbe adjacent to a bottom surface of the base layer. The collector layercan comprise a diffusion region at that top surface and an implantregion below the diffusion region. The implant region can be doped witha second dopant (e.g., an n-type dopant such as phosphorous (P),antimony (Sb) or arsenic (As)) at an approximately uniformconcentration. For example, the implant region can have a uniform seconddopant concentration that is greater than approximately 1×10¹⁸ cm⁻³.

Thus, the diffusion region can comprise a portion of the first dopantdiffused from the base layer above and a portion of the second dopantdiffused in from the implant region below. However, during the formationprocess, a laser anneal process can be performed to activate the dopantsin the implant region and to remove defects from the top surface of thecollector layer caused by the ion-implantation process that forms theimplant region. Using a laser anneal process, vice a rapid thermalanneal process, minimizes diffusion of the second dopant from theimplant region. Furthermore, since the top surface of the collectorlayer has approximately no defects, diffusion of the first dopant fromthe base layer into the collector layer below is minimized.

Thus, due to the lack of interstitials at the interface, the collectorlayer and, particularly, the diffusion region of the collector layer cancomprise a first dopant concentration profile with a first dopantconcentration just below the interface between the base and collectorlayers that is at least 100 times less than the peak concentration ofthe first dopant in the base layer just above the interface (e.g., atapproximately 0.03 μm above the interface). That is, the peakconcentration of the first dopant above the interface can be at least100 times greater than the concentration of the first dopant below theinterface. For example, the peak concentration of the first dopant justabove the interface can be greater than approximately 1×10¹⁹ cm⁻³ andthe first dopant concentration just below the interface can be less thanapproximately 1×10¹⁷ cm⁻³. This first dopant concentration profile canfurther decrease dramatically between the interface and the implantregion.

Furthermore, due to minimized diffusion of the second dopant from theimplant region, the collector layer can further comprise a second dopantconcentration profile in which the concentration of the second dopant isapproximately uniform in the implant region but decreases dramaticallythrough the diffusion region towards the interface between the base andcollector layers. For example, the concentration of the second dopant atthe implant region is greater than approximately ten times theconcentration of the second dopant at the top surface of the collectorlayer (i.e., just below the interface). For example, the concentrationof the second dopant in the implant region can be uniform and can begreater than approximately 1×10¹⁸ cm⁻³; however, in the diffusion regionthe second dopant concentration can increase from less thanapproximately 1×10¹⁷ cm⁻³ near the top surface of the collector layer(i.e., just below the interface) to approximately 1×10¹⁸ cm⁻³ at theimplant region (e.g., at approximately 0.02 μm below the top surface).

A bipolar transistor with the above-described dopant concentrationprofiles can have both a current-gain cut-off frequency (F_(t)) ofgreater than approximately 365.00 GHz and a maximum oscillationfrequency (F_(max)) of greater than approximately 255.00 GHz, which hasheretofore been unachievable with conventional technologies. It canfurther have a collector-base capacitance (Ccb) of less thanapproximately 3.40 fF and a sheet base resistance (Rbb) of less thanapproximately 110.00 Ohms.

Also, disclosed are embodiments of a method of forming the improvedsemiconductor structure and, particularly, the improved bipolartransistor structure, described above. The method comprises providing asubstrate (e.g., a semiconductor wafer) and forming an initialsemiconductor layer on the wafer. The initial semiconductor layer can beformed by epitaxially growing a semiconductor on the semiconductorwafer, using conventional processing techniques.

Then, a dopant (i.e., second dopant) can be implanted into the initialsemiconductor layer at a predetermined depth (e.g., at approximately0.03 μm below the top surface of the initial semiconductor layer) inorder to form an implant region having an approximately uniform seconddopant concentration (e.g., a uniform second dopant concentration ofgreater than approximately 1×10¹⁸ cm⁻³). This second dopant can, forexample, comprise an n-type dopant such as phosphorous (P), antimony(Sb) or arsenic (As).

Following the implantation process, the second dopant in the implantregion is activated and any defects that were formed on the top surfaceof the initial semiconductor layer as a result of the implantationprocess are removed by performing a laser anneal (e.g., a laser thermalprocess (LTP) or a laser spike anneal (LSA)). This laser anneal isperformed at temperatures greater than approximately 1100° C. and usinga technique that avoids melting of the initial semiconductor layer andachieves a thermal equilibrium in the semiconductor layer in less thanapproximately 10 ps (i.e., using a millisecond laser anneal process) inorder to minimize diffusion of the second dopant from the implant regionand, thereby, keep the second dopant profile narrow. Specifically,diffusion of the second dopant is minimized using this laser anneal suchthat a concentration profile of the second dopant outside of the implantregion decreases (e.g., from approximately 1×10¹⁸ cm⁻³ at approximately0.02 μm below the top surface of the initial semiconductor layer to lessthan approximately 1×10¹⁷ cm⁻³ near the top surface). The use of such alaser anneal further avoids clustering of point defects and forming ofextended defects and dislocation loops at the top surface thesemiconductor layer during subsequent processing. This LTP processmethodology does not affect the impact of subsequent process conditions.

Once the laser anneal is performed, an additional semiconductor layer isformed on the top surface of the initial semiconductor layer such thatit is doped with a different dopant (i.e., a first dopant). This firstdopant can be different from the second dopant and can, for example,comprise a p-type dopant such as boron (B). This additionalsemiconductor layer can, for example, be formed by epitaxially growingthe additional semiconductor layer and simultaneously in-situ doping itwith the first dopant. The doping of the additional semiconductor layercan be performed such that a peak concentration of the first dopant inthe additional semiconductor layer is greater than approximately 1×10¹⁹cm⁻³ at approximately 0.03 μm above the top surface of the initialsemiconductor layer below (i.e., above the interface between the twosemiconductor layers).

Diffusion of this first dopant from the additional semiconductor layerinto the initial semiconductor layer below is minimized due to thedefect removal process (discussed above). That is, removal of thedefects at the top surface of the initial semiconductor layer by laseranneal minimizes unwanted defect-enhanced diffusion of the first dopantand, thereby, keeps the first dopant profile narrow. Specifically,diffusion of the first dopant from the additional semiconductor layerinto the initial semiconductor layer below is minimized by the lack ofdefects at the interface (i.e., interstitials) such that a peakconcentration of the first dopant in the additional semiconductor layeradjacent to the bottom surface can be at least 100 times or greater thanthe concentration of that same first dopant in the initial semiconductorlayer.

For example, the first dopant diffusion from the additionalsemiconductor layer into the initial semiconductor layer can beminimized such that a peak concentration of the first dopant in theadditional semiconductor layer remains greater than approximately 1×10¹⁹cm⁻³ at approximately 0.03 μm above the top surface of the initialsemiconductor layer (i.e., above the interface) and a concentrationprofile of the first dopant in the diffusion region of the initialsemiconductor layer is less than approximately 1×10¹⁷ cm⁻³ just belowthe interface and decreases dramatically towards the implant region.

The above-described method can, for example, be used to form ahetero-junction bipolar transistor that has improved current-gaincut-off frequency (F_(t)) and the maximum oscillation frequency(F_(max)) over such transistors formed using conventional methods.

These and other aspects of the embodiments of the invention will bebetter appreciated and understood when considered in conjunction withthe following description and the accompanying drawings. It should beunderstood, however, that the following descriptions, while indicatingpreferred embodiments of the invention and numerous specific detailsthereof, are given by way of illustration and not of limitation. Manychanges and modifications may be made within the scope of theembodiments of the invention without departing from the spirit thereof,and the embodiments of the invention include all such modifications.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the invention will be better understood from thefollowing detailed description with reference to the drawings, in which:

FIG. 1 is a schematic block diagram illustrating an embodiment of thestructure of the invention;

FIG. 2 is a schematic graph illustrating boron concentration profilesachievable in the structure of FIG. 1 using different laser annealtemperatures;

FIG. 3 is a schematic graph illustrating phosphorous concentrationprofiles achievable in the structure of FIG. 1 using different laseranneal temperatures;

FIG. 4 is table comparing performance of the bipolar transistorstructure of FIG. 1 with prior art bipolar transistor structures;

FIG. 5 is a flow diagram illustrating an embodiment the method of theinvention;

FIG. 6 is a flow diagram illustrating another embodiment of the methodof the invention;

FIG. 7 is a schematic block diagram illustrating a partially completedstructure of the invention;

FIG. 8 is a schematic block diagram illustrating a partially completedstructure of the invention;

FIG. 9 is a schematic block diagram illustrating a partially completedstructure of the invention; and

FIG. 10 is a schematic block diagram illustrating a partially completedstructure of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The embodiments of the invention and the various features andadvantageous details thereof are explained more fully with reference tothe non-limiting embodiments that are illustrated in the accompanyingdrawings and detailed in the following description. It should be notedthat the features illustrated in the drawings are not necessarily drawnto scale. Descriptions of well-known components and processingtechniques are omitted so as to not unnecessarily obscure theembodiments of the invention. The examples used herein are intendedmerely to facilitate an understanding of ways in which the embodimentsof the invention may be practiced and to further enable those of skillin the art to practice the embodiments of the invention. Accordingly,the examples should not be construed as limiting the scope of theembodiments of the invention.

As mentioned above, limitations in current process technology haslimited both vertical and lateral scaling of silicon germanium (SiGe)hetero-junction bipolar transistors (HBTs). Specifically, narrowing ofthe transistor base and collector space-charge region increases thecurrent-gain cut-off frequency (F_(t)), but does so at the expense ofthe maximum oscillation frequency (F_(max)) because of overlap betweenthe collector and extrinsic base. Therefore, in conjunction with devicesize scaling, selective ion-implanted collector (SIC) pedestals (e.g.,as illustrated in U.S. Pat. No. 6,846,710 issued to Yi et al., on Jan.25, 2005 and incorporated herein by reference) have been incorporatedinto such SiGe HBTs in order to bring the collector region closer to thebase region and, thereby, to enhance F_(t). However, current processtechnology cannot make a SiGe HBT SIC pedestal that is narrow enough tocause minimal overlap with the extrinsic base. Furthermore,interstitials (i.e., spaces, defects, etc.) are created at the SiGe HBTbase-collector interface as a result of the prior art formationprocesses (i.e., ion-implantation (I/I) followed by a high temperaturerapid thermal anneal (RTA)). More specifically, an SIC is typicallyformed using an ion-implantation process that generates a lot of damagein the silicon lattice. A high temperature RTA process is then used toremove the damage caused by the ion-implantation process and further toallow base dopant atoms (e.g., boron) enough energy to move to anelectrically active site. However, thermal cycles of a RTA process aretypically on the order of seconds, which can allow for excessivediffusion of the base dopant, widening the base dopant profile. Thisdiffusion is enhanced by the ion-implantation defects and can lead to anincrease in the junction depth and to deactivation of the dopant,thereby, causing an increase in sheet resistance. Furthermore, thetypical RTA thermal cycle permits point defects to cluster and formextended defects and dislocation loops. These defects and dislocationloops sitting in an electrical junction may cause reduction of carriermobility, increase leakage current and degraded device performance.

Therefore, disclosed herein is an improved silicon germanium (SiGe)hetero-junction bipolar transistor having a narrow essentiallyinterstitial-free SIC pedestal with minimal overlap of the extrinsicbase. Also, disclosed is a method of forming the transistor which useslaser annealing, as opposed to rapid thermal annealing, of the SICpedestal to produce both a narrow SIC pedestal and an essentiallyinterstitial-free collector. Thus, the resulting SiGe HBT transistor canbe produced with narrower base and collector space-charge regions thancan be achieved with conventional technology.

Referring to FIG. 1, disclosed herein is an embodiment of an improvedmulti-layered semiconductor structure 150. The structure 150 comprises afirst semiconductor layer 103 and a second semiconductor layer 102 belowthe first semiconductor layer 103. Specifically, a top surface 112 ofthe second semiconductor layer 102 is adjacent to a bottom surface 113of the first semiconductor layer 103.

The first semiconductor layer 103 is doped with a first dopant 181(e.g., at a peak concentration of approximately 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the interface between the bottom surface ofthe first semiconductor layer 103 and the top surface of the secondsemiconductor layer 103). The second semiconductor layer 102 can furthercomprise a diffusion region 130 at its top surface 112 (i.e., just belowthe interface between the layers 102-103) and an implant region 120below the diffusion region 130. The implant region 120 can, for example,be doped with a second dopant 182 (e.g., an n-type dopant such asphosphorous (P), antimony (Sb) or arsenic (As)) at an approximatelyuniform concentration that is, for example, greater than approximately1×10¹⁸ cm⁻³.

Thus, the diffusion region 130 can comprise not only a portion of thefirst dopant 181 diffused from the first semiconductor layer 103 abovebut also a portion of the second dopant 182 diffused in from the implantregion 120 below. However, during the formation process, a laser annealprocess can be performed to remove defects from the top surface 112 ofthe second semiconductor layer 102. More specifically, this laser annealprocess is performed to remove defects that are caused by theion-implantation process that forms the implant region 130 and toactivate the dopants 182 in the implant region 130. Using this laseranneal process, vice a rapid thermal anneal process, minimizes diffusionof the second dopant 182 from the implant region 120 into the diffusionregion 130.

Thus, due to the lack of defects (i.e., interstitials) at the interface,diffusion between the layers 102-103 is minimized and a peakconcentration of this first dopant in the first semiconductor layer 103near its bottom surface 113 can be at least 100 times greater than aconcentration of that same first dopant in the diffusion region 130 ofthe second semiconductor layer 102. For example, as mentioned above, thefirst semiconductor layer 103 can be doped with a first dopant 181(e.g., a p-type dopant such as boron (B)). A peak concentration of thisfirst dopant in the first semiconductor layer 103 can be greater thanapproximately 1×10¹⁹ cm⁻³ at approximately 0.03 μm above its bottomsurface 113. Additionally, due to the lack of interstitials at theinterface 112-113 between the layers 102-103, the peak concentration ofthis first dopant in the first semiconductor layer 103 can remaingreater than approximately 1×10¹⁹ cm⁻³ and the diffusion region 130 ofthe second semiconductor layer 102 can comprise a first dopantconcentration profile with a first dopant concentration just below theinterface that is less than approximately 1×10¹⁷ cm⁻³ and that decreaseswith depth (see FIG. 2). That is, the peak concentration of the firstdopant above the interface is at least 100 times greater than theconcentration of the first dopant below the interface.

Furthermore, due to minimized diffusion of the second dopant 182 fromthe implant region 120, the second semiconductor layer 102 can furthercomprise a second dopant concentration profile in which theconcentration of the second dopant 182 is approximately uniform in theimplant region 120 but decreases dramatically through the diffusionregion 130 from the implant region 120 towards the interface 112-113between the two semiconductor layers 102-103. For example, theconcentration of the second dopant 182 at the implant region 120 cangreater than approximately ten times the concentration of the seconddopant 182 at the top surface 112 of the second semiconductor layer 102.For example, the concentration of the second dopant 182 in the implantregion 120 can be uniform and can be greater than approximately 1×10¹⁸cm⁻³; however, in the diffusion region 130 this concentration canincrease from less than approximately 1×10¹⁷ cm⁻³ near the top surface112 of the second semiconductor layer 112 (i.e., just below theinterface) to approximately 1×10¹⁸ cm⁻³ at the implant region 120 (e.g.,at approximately 0.02 μm below the interface) (see FIG. 3).

Additionally, this semiconductor structure 150 can, for example, beincorporated into a silicon germanium hetero-junction bipolar transistor100 in order to improve both the current-gain cut-off frequency (F_(t))and the maximum oscillation frequency (F_(max)). Specifically, thebipolar transistor structure 100 of FIG. 1 is similar to prior artbipolar transistor structures in that it can comprise a semiconductorsubstrate 101 that is doped with a first conductivity type dopant 181(e.g., a substrate doped with a p-type dopant such as boron (B)). A toplayer 106 of the substrate 101 can further be doped with a secondconductivity type dopant 182 (e.g., an n-type dopant such as phosphorous(P), antimony (Sb) or arsenic (As)), thereby, forming a highly dopedsub-collector (i.e., a buried collector) layer 106 at the top of thesubstrate 101.

The bipolar transistor structure 100 can further comprise a collectorlayer 102 (e.g., an epitaxially grown silicon layer) on the buriedcollector layer 106. Impurity ions from the buried collector layer 106can diffuse into the collector layer 102 so that the collector layer islightly doped with the second conductivity type dopant 182. Thiscollector layer 102 can further comprise a selective implant collector(SIC) pedestal 120 that is implanted with the second conductivity typedopant such that the collector layer 102 is heavily doped within thislimited pedestal region.

The bipolar transistor structure 100 can also comprise an epitaxiallygrown silicon-germanium intrinsic base 103 that is in-situ doped withthe first conductivity type dopant 181 (e.g., a p-type dopant such asboron (B)). That is, the base layer 103 can be formed such that the topsurface 112 of the collector layer 102 is adjacent to the bottom surface113 of the base layer 103.

Finally, the bipolar transistor 100 can further comprise an emitter 105that is doped with the second conductivity type dopant 182 (e.g., ann-type dopant such as phosphorous (P), antimony (Sb) or arsenic (As))and an extrinsic base 104 on either side of the emitter 105 above theintrinsic base 103.

However, the bipolar transistor structure 100 can be distinguished fromprior art silicon-germanium hetero-junction bipolar transistors in that,due to the techniques used to form the structure, the SIC pedestal 120is essentially interstitial free and there is minimal overlap of theextrinsic base. Thus, the base and collector space-charge regions arenarrower than can be achieved with conventional technology.

More specifically, referring to FIG. 1, such a bipolar transistor 100can comprise a base layer 103 (e.g., an epitaxially grown silicongermanium base layer) that is in situ doped with a first dopant (e.g., ap-type dopant such as boron (B)). A peak concentration of first dopant181 in the base layer 103 can be approximately 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the interface between the bottom surface 113of the base layer 103 and the top surface 112 of the collector layer 103(see FIG. 2). The base layer 103 can be formed (i.e., epitaxially grownand in-situ doped) above a collector layer 102 (e.g., a siliconcollector layer). Specifically, the top surface 112 of the collectorlayer 102 can be adjacent to the bottom surface 113 of the base layer103. The collector layer 102 can comprise a diffusion region 130 at itstop surface 112 (i.e., just below the interface between the layers102-103) and a selective implant collector region (SIC) 120 below thediffusion region 130. The implant region 120 can be doped with a seconddopant (e.g., an n-type dopant such as phosphorous (P), antimony (Sb) orarsenic (As)) at an approximately uniform concentration, for example,that is greater than approximately 1×10¹⁸ cm⁻³.

Thus, the diffusion region 130 can comprise a portion of the firstdopant 181 diffused from the base layer 103 above and a portion of thesecond dopant 182 diffused in from the SIC region 120 below. However,during the formation process, a laser anneal process can be performed.This laser anneal process is performed in order to activate the dopants182 in the implant region 120 as well as to remove defects from the topsurface 112 of the collector layer 103 caused by the ion-implantationprocess that forms the implant region 120. Using a laser anneal process,vice a conventional rapid thermal anneal (RTA) process, minimizesdiffusion of the second dopant 182 from the implant region 120 as wellas diffusion of the first dopant between the layers 102-103.

Thus, due to the lack of interstitials at the interface 112-113 betweenthe layers 102-103, the diffusion region 130 of the collector layer 102can comprise a first dopant concentration profile with a first dopantconcentration just below the interface between the base and collectorlayers that is at least 100 times less than the peak concentration ofthe first dopant in the base layer just above the interface (e.g., atapproximately 0.03 μm above the interface. That is, the peakconcentration of the first dopant above the interface is at least 100times greater than the concentration of the first dopant below theinterface. For example, if the peak concentration of the first dopant181 is approximately 1×10¹⁹ cm⁻³ at approximately 0.03 μm above theinterface, the first dopant concentration just below the interface canbe less than approximately 1×10¹⁷ cm⁻³ and that decreases with depth(see FIG. 2).

Furthermore, due to minimized diffusion of the second dopant 182 fromthe implant region 120 the collector layer 102 can further comprise asecond dopant concentration profile in which the concentration of thesecond dopant 182 is approximately uniform within the implant region 120but decreases dramatically through the diffusion region 130 from theimplant region 120 towards the interface 112-113 between the base andcollector layers 102-103. For example, the concentration of the seconddopant 182 at the implant region 120 can be greater than approximatelyten times the concentration of the second dopant 182 at the top surface112 of the collector layer 102 (i.e., just below the interface). Forexample, the concentration of the second dopant in the implant regioncan be uniform and can be greater than approximately 1×10¹⁸ cm⁻³;however, in the diffusion region 130 this second dopant concentrationcan increase from less than approximately 1×10¹⁷ cm⁻³ near the topsurface 112 of the collector layer 102 (i.e., just below the interface)to approximately 1×10¹⁸ cm⁻³ just at the implant region 120 (e.g., atapproximately 0.02 μm below the top surface 112) (see FIG. 3).

As illustrated in FIG. 4, a bipolar transistor 100 with theabove-described dopant concentration profiles can exhibit both acurrent-gain cut-off frequency (F_(t)) of greater than approximately365.00 GHz and a maximum oscillation frequency (F_(max)) of greater thanapproximately 255.00 GHz, which has heretofore been unachievable withconventional technologies. It can further have a collector-basecapacitance (Ccb) of less than approximately 3.40 fF and a sheet baseresistance (Rbb) of less than approximately 110.00 Ohms.

Also, disclosed are embodiments of a method of forming the improvedsemiconductor structure 150 and, particularly, the improved bipolartransistor structure 100, described above.

More particularly, referring to FIG. 5 in combination with FIG. 1, anembodiment of the method comprises providing a substrate (e.g., asemiconductor wafer) (501) and forming an initial semiconductor layer102 on the wafer (502). The initial semiconductor layer 102 can beformed by epitaxially growing a semiconductor on the semiconductorwafer, using conventional processing techniques.

Then, a dopant 182 (i.e., second dopant) can be implanted into theinitial semiconductor layer at a predetermined depth (e.g.,approximately 0.03 μm below the top surface of the semiconductor layer)in order to form an implant region 120 having, for example, anapproximately uniform second dopant concentration of greater thanapproximately 1×10¹⁸ cm⁻³ (503). This second dopant 182 can, forexample, comprise an n-type dopant such as phosphorous (P), antimony(Sb) or arsenic (As). Formation of the implant region 120 in the desiredregion of the semiconductor layer 102 can be accomplished by aconventional masked ion-implantation process (e.g., by depositing aphoto-resist layer, patterning the photo-resist layer to expose adesired portion of the semiconductor layer 102 and implanting theselected dopant 182 into the exposed portion of the semiconductor layer102).

Following the implantation process, the second dopant 182 in the implantregion 120 is activated and any defects that were formed on the topsurface 112 of the initial semiconductor layer 102 as a result of theimplantation process are removed by performing a laser anneal (e.g., alaser thermal process (LTP) or a laser spike anneal (LSA)) (504). Thislaser anneal is performed at temperatures greater than approximately1100° C. and using a technique that avoids melting of the initialsemiconductor layer 102 and achieves a thermal equilibrium in thesemiconductor layer in less than approximately 10 ps (i.e., using amillisecond laser anneal process). That is, the laser interacts with thesilicon, transferring its energy to the lattice and, thereby, causingincreased lattice vibration. The increased lattice vibrations createheat and in doing so allow thermal equilibrium to be achieved in lessthan 10 ps. This fast thermal equilibrium minimizes diffusion of thesecond dopant from the implant region and, thereby, keeps the seconddopant profile narrow. Specifically, diffusion of the second dopant 182is minimized using this laser anneal, for example, such that aconcentration profile of the second dopant 182 outside of the implantregion 120 decreases between the implant region 120 and the top surface112 of the initial semiconductor layer 102 (e.g., from approximately1×10¹⁸ cm⁻³ at approximately 0.02 μm below the top surface of thesemiconductor layer to less than approximately 1×10¹⁷ cm⁻³ near the topsurface 112. The use of such a laser anneal further avoids clustering ofpoint defects and forming of extended defects and dislocation loops atthe top surface the semiconductor layer during subsequent processing.

Once the laser anneal is performed, an additional semiconductor layer103 is formed on the top surface of the initial semiconductor layer 102such that it is heavily doped with a different dopant 181 (i.e., a firstdopant) (505). This first dopant 181 can be different from the seconddopant and can, for example, comprise a p-type dopant such as boron (B).This additional semiconductor layer 103 can, for example, be formed byepitaxially growing the additional semiconductor layer 103 on top of theinitial semiconductor layer 102 and simultaneously in-situ doping itwith the first dopant 181 (e.g., such that a peak concentration of thefirst dopant 181 in the additional semiconductor layer 103 is greaterthan approximately 1×10¹⁹ cm⁻³ at approximately 0.03 μm above the topsurface 112 of the semiconductor layer 102 below (i.e., above theinterface between the layers 102-103).

Diffusion of this first dopant 181 from the additional semiconductorlayer 103 into the initial semiconductor layer 102 below is minimizeddue to the defect removal process (discussed above at process 504). Thatis, removal of the defects minimizes unwanted defect-enhanced diffusionof the first dopant 181 and, thereby, maintains the desired dopantconcentration in the additional semiconductor layer and further keepsthe dopant profile narrow. Specifically, diffusion of the first dopant181 from the additional semiconductor layer 103 into the initialsemiconductor layer 102 below is minimized by the lack of defects at theinterface 112-113 (i.e., the lack of interstitials) such that a peakconcentration of the first dopant 181 in the additional semiconductorlayer 103 adjacent to the bottom surface 113 can remain at least 100times greater than a concentration of that same first dopant in theinitial semiconductor layer 102.

For example, the first dopant diffusion can be minimized such that apeak concentration of the first dopant 181 in the additionalsemiconductor layer 103 can remain greater than approximately 1×10¹⁹cm⁻³ at approximately 0.03 μm above the top surface 112 of the initialsemiconductor layer 102 (i.e., just above the interface) and aconcentration profile of the first dopant 181 in the initialsemiconductor layer 102 is less than approximately 1×10¹⁷ cm⁻³ at thetop surface 112 (i.e., just below the interface) and decreasesdramatically towards the implant region 120 (see FIGS. 2-3).

Referring to FIG. 6 in combination with FIG. 1, the above-describedmethod can, for example, be used to form a hetero-junction bipolartransistor (see transistor 100 of FIG. 1) that has improved current-gaincut-off frequency (F_(t)) and the maximum oscillation frequency(F_(max)) over such transistors formed using conventional methods.

Specifically, a semiconductor substrate 101 that is doped with a firstconductivity type dopant 181 (e.g., a substrate doped with a p-typedopant such as boron (B)) is provided (601, see FIG. 7). Then, the toplayer 106 of the substrate 101 is doped (e.g., by a conventionalion-implantation process) with a second conductivity type dopant 182(e.g., an n-type dopant such as phosphorous (P), antimony (Sb) orarsenic (As)), thereby, forming a highly doped sub-collector (i.e., aburied collector) layer 106 at the top of the substrate 101 (602, seeFIG. 7).

Then, a silicon collector layer 102 is formed on top of the buriedcollector layer 106 (603, see FIG. 7). This silicon collector layer 102can be formed, for example, using a conventional epitaxial depositionprocess. Impurity ions from the buried collector layer 106 can diffuseinto the collector layer 102 so that the collector layer 102 will belightly doped with the second conductivity type dopant 182.

Then, a dopant (i.e., second dopant 182) can be implanted into thesilicon collector layer 102 at a predetermined depth (e.g.,approximately 0.03 μm below the top surface of the silicon collectorlayer) in order to form a selective implant collector (SIC) pedestal 120having an approximately uniform second dopant concentration, forexample, a uniform concentration of greater than approximately 1×10¹⁸cm⁻³ (604, see FIG. 8).

As with the semiconductor structure, described above, this second dopant182 can, for example, comprise an n-type dopant such as phosphorous (P),antimony (Sb) or arsenic (As). Formation of the implant region 120 inthe desired region of the collector layer 102 can be accomplished by aconventional masked ion-implantation process (e.g., by depositing aphoto-resist layer 125, patterning the photo-resist layer 125 to exposea desired portion 126 of the collector layer 102 and implanting theselected dopant 182 into the exposed portion 126 of the collector layer102).

Following the implantation process, the second dopant 182 in the SICpedestal 120 is activated and any defects that were formed on the topsurface 112 of the silicon collector layer 102 as a result of theimplantation process are removed by performing a laser anneal (e.g., alaser thermal process (LTP) or a laser spike anneal (LSA)) (605, seeFIG. 9). This laser anneal is performed at temperatures greater thanapproximately 1100° C. and using a technique that avoids melting of thecollector layer 102 and achieves a thermal equilibrium in the collectorlayer 102 in less than approximately 10 ps (i.e., using a millisecondlaser anneal process) in order to minimize diffusion of the seconddopant 182 from the SIC pedestal 120 and, thereby, keep the seconddopant profile narrow. Specifically, diffusion of the second dopant 182is minimized using this laser anneal, for example, such that aconcentration profile of the second dopant 182 outside of the SICpedestal decreases significantly between the implant region and the topsurface 112 of the collector layer 102 (e.g., decreases fromapproximately 1×10¹⁸ cm⁻³ at approximately 0.02 μm below the top surface112 of the collector layer 102 to less than approximately 1×10¹⁷ cm⁻³near the top surface 112 (see FIG. 3)). The use of such a laser annealfurther avoids clustering of point defects and forming of extendeddefects and dislocation loops at the top surface 112 the siliconcollector layer 102 during subsequent processing. Those skilled in theart will recognize that such a laser anneal process in lieu of a rapidthermal anneal (RTA) can be easily integrated into current formationmethodologies. Specifically, laser processing methodologies will notdisrupt previous or subsequent process models or steps.

Once the laser anneal is performed, a silicon germanium base layer 103is formed on the top surface 112 of the silicon collector layer 102 suchthat it is doped with a different dopant 181 (i.e., a first dopant)(606, see FIG. 10). This first dopant 181 can be different from thesecond dopant 182 and can, for example, comprise a p-type dopant such asboron (B). This base layer 103 can, for example, be formed by using anepitaxial deposition process in which the base layer 103 issimultaneously formed and in-situ doped with the first dopant 181.

During the in-situ doping process, the base layer 103 can, for example,be doped such that a peak concentration of the first dopant 181 in thesilicon germanium layer 103 is greater than approximately 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the top surface 112 of the silicon collectorlayer 102 below (i.e., above the interface between the layers 102-103).Diffusion of this first dopant from the silicon germanium base layer 103into the silicon collector layer 102 below 181 is minimized due to thedefect removal process (discussed above at process 605). That is,removal of the defects minimizes unwanted defect-enhanced diffusion ofthe first dopant 181 and, thereby, maintains the desired dopantconcentration in the base layer 103 and further keeps the dopant profilenarrow.

Specifically, diffusion of the first dopant 181 from the base layer 103into the collector layer 102 below is minimized by the lack of defectsat the interface 112-113 (i.e., lack of interstitials) such that a peakconcentration of the first dopant 181 in the base layer 103 adjacent tothe bottom surface 113 (i.e., just above the interface) can remain atleast 100 times greater than a concentration of that same first dopant181 in the collector layer 102. For example, the first dopant diffusioncan be minimized such that a peak concentration of the first dopant 181in the base layer 103 remains greater than approximately 1×10¹⁹ cm⁻³ atapproximately 0.03 μm above the top surface 112 of the collector layer103 and a concentration profile of the first dopant in the collectorlayer is less than approximately 1×10¹⁷ cm⁻³ at the top surface 112 anddecreases dramatically towards the implant region 120 (see FIGS. 2-3).

Following formation of the silicon germanium base layer 103,conventional processing techniques can be used to complete the HBTstructure (607, see FIG. 1), including but not limited to the formationof device isolation structures, the emitter 105, the extrinsic base 104,etc.

Forming the silicon germanium hetero-junction bipolar transistor 100 inthis manner has the advantage of completely removing defects (e.g.,point-defects) from the collector layer surface and, thereby, reducingoutdiffusion of both the SIC and base layer dopants. This results in anarrower base, narrower collector-base junction, reducing collector-basecapacitance (Ccb) and increases Fmax. The resulting narrower intrinsicboron profile reduces the base transit time and increases Ft.Furthermore, removal of point defects reduces the probability of formingextended defects such as dislocations, improving device yield. Moreparticularly, referring again to FIG. 1, forming the silicon germaniumhetero-junction bipolar transistor 100 in this manner minimizes thediffusion of both the second dopant 182 out of the SIC pedestal 120 andthe first dopant 18 into the collector layer 102 (i.e., narrows theprofiles of both the base layer 102 and the SIC pedestal 120) and,thereby, allows the bipolar transistor 100 to be formed with acurrent-gain cut-off frequency (F_(t)) of greater than approximately365.00 GHz, a maximum oscillation frequency (F_(max)) of greater thanapproximately 255.00 GHz, a collector-base capacitance (Ccb) less thanapproximately 3.40 fF and a sheet base resistance (Rbb) less thanapproximately 110.00 Ohms (see FIG. 4).

The embodiments of the method of the invention are described above andillustrated in FIG. 6 in terms of the SIC implant process 604 and laseranneal process 606 being performed prior to the formation of the baselayer at process 606. However, similar results (i.e., both improvedcurrent-gain cut-off frequency (F_(t)) and improved maximum oscillationfrequency (F_(max))) are also achievable when the collector layer isformed at process 602, followed by formation of the base layer 606,formation of the SIC pedestal 604, and finally the laser anneal process605. That is, results are confirmed with SIC implantation 604 and laseranneal 605 before the base layer formation 606 and also with SICimplantation 604 and laser anneal 605 after the base layer formation606.

Therefore, disclosed above is an improved semiconductor structure (e.g.,a silicon germanium (SiGe) hetero-junction bipolar transistor) having anarrow essentially interstitial-free SIC pedestal with minimal overlapof the extrinsic base. Also, disclosed is a method of forming thetransistor which uses laser annealing, as opposed to rapid thermalannealing, of the SIC pedestal to produce both a narrow SIC pedestal andan essentially interstitial-free collector. Thus, the resulting SiGe HBTtransistor can be produced with narrower base and collector space-chargeregions than can be achieved with conventional technology.

The foregoing description of the specific embodiments will so fullyreveal the general nature of the invention that others can, by applyingcurrent knowledge, readily modify and/or adapt for various applicationssuch specific embodiments without departing from the generic concept,and, therefore, such adaptations and modifications should and areintended to be comprehended within the meaning and range of equivalentsof the disclosed embodiments. It is to be understood that thephraseology or terminology employed herein is for the purpose ofdescription and not of limitation. Therefore, those skilled in the artwill recognize that the embodiments of the invention can be practicedwith modification within the spirit and scope of the appended claims.

1. A semiconductor structure comprising: a first semiconductor layer having a bottom surface and comprising silicon germanium and a first dopant having a first conductivity type; a second semiconductor layer below and immediately adjacent to said first semiconductor layer, said second semiconductor layer comprising silicon and a second dopant having a second conductivity type different from said first conductivity type; and a third semiconductor layer below and immediately adjacent to said second semiconductor layer, wherein none of said first semiconductor layer, said second semiconductor layer and said third semiconductor layer are carbon-doped, wherein said second semiconductor layer has a top surface adjacent to said bottom surface and comprises a diffusion region at said top surface, wherein said diffusion region comprises said first dopant and said second dopant, and wherein said top surface comprises approximately no defects such that a peak concentration of said first dopant in said first semiconductor layer adjacent to said bottom surface is at least 100 times greater than a concentration of said first dopant in said diffusion region of said second semiconductor layer.
 2. The semiconductor structure of claim 1, wherein the concentration of said first dopant in said first semiconductor layer increases from approximately 1×10¹⁷ cm⁻³. at said bottom surface to said peak concentration at approximately 0.03 μm above said bottom surface, said peak concentration of said first dopant in said first semiconductor layer being greater than approximately 1×10¹⁹ cm⁻³.
 3. The semiconductor structure of claim 1, wherein said concentration of said first dopant in said diffusion region is less than approximately 1×10¹⁶ cm⁻³.
 4. The semiconductor structure of claim 1, said third semiconductor layer comprising silicon and said second dopant, wherein said second semiconductor layer further comprises an implant region below said diffusion region, said implant region adjacent to said third semiconductor layer and extending vertically from said third semiconductor layer towards said top surface of said second semiconductor layer, said implant region further being separated from said top surface of said second semiconductor layer by approximately 0.03 μm, said implant region being narrower in width than said diffusion region and comprising said second dopant at a higher concentration than in any other region of said second semiconductor layer, and, wherein a concentration profile of said second dopant in said second semiconductor layer is approximately uniform within said implant region and decreases through said diffusion region such that a concentration of said second dopant in said implant region is greater than approximately ten times a concentration of said second dopant at said top surface.
 5. The semiconductor structure of claim 1, wherein said first dopant comprises a p-type dopant comprising boron and said second dopant comprises an n-type dopant comprising one of phosphorous, antimony and arsenic.
 6. A bipolar transistor comprising: a base layer having a bottom surface and comprising silicon germanium and a first dopant having a first conductivity type; a collector layer below and immediately adjacent to said base layer, said collector layer comprising silicon and a second dopant having a second conductivity type different from said first conductivity type; and a sub-collector layer below and immediately adjacent to said collector layer, wherein none of said base layer, said collector layer and said sub-collector layer are carbon-doped, wherein said collector layer has a top surface adjacent to said bottom surface of said base layer and comprises a diffusion region at said top surface, wherein said diffusion region comprises said first dopant and said second dopant, and wherein said top surface comprises approximately no defects such that a peak concentration of said first dopant in said base layer adjacent to said bottom surface is at least 100 times greater than a concentration of said first dopant in said diffusion region of said collector layer.
 7. The bipolar transistor of claim 6, wherein the concentration of said first dopant in said base layer increases from approximately 1×10¹⁷ cm⁻³ at said bottom surface to said peak concentration at approximately 0.03 μm above said bottom surface, said peak concentration of said first dopant in said base layer being greater than approximately 1×10¹⁹ cm⁻³.
 8. The bipolar transistor of claim 6, wherein said concentration of said first dopant in said diffusion region is less than approximately 1×10¹⁶ cm⁻³.
 9. The bipolar transistor of claim 6, said sub-collector layer comprising silicon and said second dopant, wherein said collector layer further comprises an implant region below said diffusion region, said implant region adjacent to said sub-collector layer and extending vertically from said sub-collector layer towards said top surface of said collector layer, said implant region further being separated from said top surface of said collector layer by approximately 0.03 μm, said implant region being narrower in width than said diffusion region and comprising said second dopant at a higher concentration than in any other region of said collector layer, and wherein a concentration profile of said second dopant in said collector layer is approximately uniform within said implant region and decreases through said diffusion region such that a concentration of said second dopant in said implant region is greater than approximately ten times a concentration of said second dopant at said top surface.
 10. The bipolar transistor of claim 8, wherein said implant region further comprises a selective implant collector region.
 11. The bipolar transistor of claim 6, having both a current-gain cut-off frequency (F_(t)) of greater than approximately 365.00 GHz and a maximum oscillation frequency (F_(max)) of greater than approximately 255.00 GHz.
 12. The bipolar transistor of claim 9, having a collector-base capacitance (Ccb) less than approximately 3.40 fF and a sheet base resistance (Rbb) less than approximately 110.00 Ohms.
 13. The semiconductor structure of claim 4, wherein a concentration of said second dopant within said implant region is greater than 1×10¹⁸ cm⁻³ and is further approximately uniform and wherein a concentration of said second dopant within said diffusion region decreases from greater than approximately 1×10¹⁸ cm⁻³ adjacent to said implant region to less than approximately 1×10¹⁷ cm⁻³ to said first semiconductor layer at said top surface of said second semiconductor layer.
 14. The bipolar transistor of claim 9, wherein a concentration of said second dopant within said implant region is greater than 1×10¹⁸ cm⁻³ and is further approximately uniform and wherein a concentration of said second dopant within said diffusion region decreases from greater than approximately 1×10¹⁸ cm⁻³ adjacent to said implant region to less than approximately 1×10¹⁷ cm⁻³ adjacent to said base layer at said top surface of said collector layer.
 15. The bipolar transistor of claim 6, wherein said second dopant comprises an n-type dopant comprising one of phosphorous, antimony and arsenic and wherein said first dopant comprises a p-type dopant comprising boron.
 16. A bipolar transistor comprising: a raised extrinsic base layer having first and second portions separated by a space; an emitter layer positioned within said space between said first and second portions, said emitter layer having opposing sidewalls; sidewall spacers adjacent said opposing sidewalls and separating said emitter layer from said first and second portions; a base layer below said emitter layer, said sidewall spacers, and said first and second portions, said base layer having a bottom surface and comprising silicon germanium and a p-type dopant; a collector layer below said base layer; and a sub-collector layer below said collector layer, said collector layer and said sub-collector layer each comprising silicon and an n-type dopant, wherein none of said base layer, said collector layer and said sub-collector layer are carbon-doped, wherein said collector layer has a top surface adjacent to said bottom surface of said base layer, said top surface comprising approximately no defects, wherein said collector layer further comprises: a diffusion region at said top surface adjacent said base layer, said diffusion region comprising said p-type dopant and said n-type dopant; and an implant region below said diffusion region, said implant region adjacent to said sub-collector layer extending vertically from said sub-collector layer towards said top surface of said collector layer, said implant region further being separated from said top surface of said collector layer by approximately 0.03 μm, said implant region being aligned with said emitter layer and further being narrower in width than said space such that outer edges of said implant region do not extend laterally below said raised extrinsic base layer, and said implant region comprising said second dopant at a higher concentration than in any other region of said collector layer, wherein a concentration of said p-type dopant within said diffusion region is less than approximately 1×10¹⁶ cm⁻³, wherein a peak concentration of said p-type dopant in said base layer is approximately 1×10¹⁹ cm⁻³ at approximately 0.03 μm above said bottom surface, wherein a concentration of said n-type dopant within said implant region is greater than approximately 1×10¹⁸ cm⁻³ and is further approximately uniform, and wherein a concentration of said n-type dopant within said diffusion region decreases from greater than approximately 1×10¹⁸ cm⁻³ adjacent to said implant region to less than approximately 1×10¹⁷ cm⁻³ adjacent to said base layer at said top surface of said collector layer.
 17. The bipolar transistor of claim 16, wherein the concentration of said first dopant in said base layer increases from approximately 1×10¹⁷ cm⁻³ at said bottom surface to said peak concentration.
 18. The bipolar transistor of claim 16, wherein said concentration of said p-type dopant in said diffusion region is less than approximately 1×10¹⁶ cm⁻³.
 19. The bipolar transistor of claim 16, having both a current-gain cut-off frequency (F_(t)) of greater than approximately 365.00 GHz and a maximum oscillation frequency (F_(max))of greater than approximately 255.00 GHz.
 20. The bipolar transistor of claim 16, having a collector-base capacitance (Ccb) less than approximately 3.40 fF and a sheet base resistance (Rbb) less than approximately 110.00 Ohms.
 21. The bipolar transistor of claim 16, said n-type dopant comprising one of phosphorous, antimony and arsenic and said p-type dopant comprising boron. 